High Thermal Conductivity Silicon Nitride - Ideal as Insulating Substrate for High-Power Electronic Devices
Goodfellow has expanded its range of advanced ceramics with the addition of high thermal conductivity silicon nitride.
With thermal conductivity of 100 W/mK, four times higher than standard silicon nitride, this material is emerging as a preferred insulating substrate for next-generation power modules, high-frequency circuits and LED mounting.
High thermal conductivity silicon nitride is nearly as light as silicon carbide but is significantly stronger, with high fracture toughness that makes it resistant to impact and shocks. It can be polished to a surface roughness of Ra=0.02µm and is exceptionally wear resistant.
The substrate size offered by Goodfellow is 100mm x 100mm with a thickness of 0.32mm. Different sizes and thicknesses may be available upon request. In addition to high thermal conductivity silicon nitride in sheet form, Goodfellow can supply standard silicon nitride as powder, rods, sheets, spheres, targets and tubes.
For more information about high thermal conductivity silicon nitride, call 0800 731 4653 (UK) or 44 (0) 1480 424 800, or email email@example.com.