Bentham Instruments Limited

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Categories:Imaging

PVE300 Photovoltaic EQE (IPCE) and IQE solution

The PVE300 system is an essential tool in photovoltaic research and production line quality processes, employed in the accurate determination of solar cell spectral response/ EQE (IPCE) and IQE.

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The PVE300 features full compatibility with all types of photovoltaic devices, materials and architectures, including c:Si, mc:Si, a:Si, µ:Si, CdTe, CIGS, CIS, Ge, dye-sensitised, organic/polymer, tandem, multi-junction (2-, 3-, 4-junction and more), quantum well, quantum dots, chalcogenides and perovskites.

Core benefits

Features 

  • Optimised tuneable light source based on xenon-quartz tungsten halogen dual source and single monochromator
  • Wide range of operation (300-2500nm) beyond this, please enquire
  • Reflective optics beam delivery to sample plane
  • A range of sample mounts and detection electronics to suit all device types and architectures
  • Windows control software provides full automation via USB 2.0
  • Direct determination of device spectral response (SR, A W-1)
  • Direct determination of device external quantum efficiency (EQE/IPCE, %)
  • Direct determination of total reflectance, R and transmittance, T, to convert EQE to internal quantum efficiency (IQE, %)

Applications 

  • IEC 60904-8:2014 - Photovoltaic devices - Part 8: Measurement of spectral responsivity of a photovoltaic (PV) device
  • IEC 60904-8-1:2017 - Photovoltaic devices - Part 8-1: Measurement of spectral responsivity of multi-junction photovoltaic (PV) devices

Reported Parameters

  • EQE/IPCE
  • IQE
  • Predicted Jsc
  • Reflectance
  • Transmittance

Recent Citations

Monochromatic Probe (TMc300)

Probe light source75W Xenon and 100W Quartz halogen (QTH)
Monochromator configurationTriple grating, symmetric, single Czerny-Turner, 300mm focal length
BandwidthAdjustable fixed slit, 1-10nm typical
Resolution0.3nm (1200g/mm); 0.6nm (600g/mm)
Dispersion2.7nm/mm (1200g/mm); 5.4nm/mm (600g/mm)
Wavelength range300-1100nm (1200g/mm ); 1100-2500nm (600g/mm)
Wavelength accuracy± 0.2nm (1200g/mm); ± 0.4nm (600g/mm)
Relay opticMirror-based, 1.2x magnification
Probe sizeUp to 6x6mm

Temperature-Controlled Vacuum Mount

Temperature control4x70W Peltier-based heat pump, water- cooled hot side
Temperature range15-65°C
Temperature feedbackCentrally-positioned sensor situated 3mm below sample plane
Temperature stability± 1°C

 

Light Bias

Transport to sampleBranched glass fibre bundle
Bias source irradiance0-1.5 suns
Bias source uniformity±1% over 1 cm2
Filter optionTwo 50mm square filter holders
Source optionsQuartz halogen/ Xenon/ Class B AM1.5

Automation

Software controlBenwin+ Windows application
InterfaceUSB

Reference Diodes

Diode & rangeSilicon 300-1100nm; Germanium 800-1800nm
TraceabilityPTB, Germany

Voltage Bias (optional)

Voltage range-20 to 20V

XY Stage (optional)

Travel in x250mm
Travel in y200mm
Positional Accuracy±16µm
Bi-directional repeatability±1µm
Resolution0.5µm
Drive typeStepper motor
Speed15mm/s

Integrating Sphere

Port size15mm Ø (5 &10mm Ø port reducers supplied)
CoatingBa2SO4
DetectorSilicon/ Germanium/ Silicon-InGaAs sandwich

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